2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper for exam preparation. Question paper for 2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper, 2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper. SiteMap
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2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper

University Question Papers
2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper
BE/B.TECH DEGREE EXAMINATION, APRIL/MAY 2003

Second Semester

Electronics and Communication Engineering

EC141-ELECTRONIC DEVICES

(Common to Bio Medical Engineering)

Time:3hrs Maximum:100marks

Answer ALL questions.

PART A-(10X2=20marks)
1.An electron from rest is accelerated by a potential of 200V.Find the final velocity of the electron.
2.What is an LCD?What are its advantages?
3.Define Hall effect.What is its application?
4.Discuss about the property and use of thermistor.
5.Draw a simple zener shunt regulator circuit diagram.
6.If the reverse saturation current in a PN junction silicon diode is 1nA,find the applied voltage for a forward current
of 0.5uA.
7.Draw the hybrid pi model,of a transister.
8.What is power FET?
9.What are the advantages of CMOS ICs?
10.Draw the V-I characteristics of a SCR.

PART B-(5X16=80marks)
11.Write the equation for the net electron current in a semiconductor.Explain the origin and physical significance
of each of them.(16)
12.(a)Explain about electrostatic deflection system in a CRT.Derive the expression for deflection sensitivity.(16)
Or
(b)(i)With relevant diagrams,write about the motion of an electron in a magnetic field(8)
(ii)In a CRT,employing magnetic deflection,the distance from the screen to the end of the coil is 24cm.The length
of the field along the axis is 4cm.Calculate the magnetic flux density required to produce a deflection of 1.2cm on
the screen for the final anode voltage of 600V.(8)
13.(a)Explain tunneling phenomenon.Draw the characteristics of the device which uses this property.What is the
application of the device?(16)
Or
(b)(i)Describe about the dominant capacitance effect when a PN junction diode is reverse biased.Is there any
application of this effect?Describe.(10)
(ii)Derive the Ebers Moll model for a PNP transistor.(6)
14.(a)With relevant diagrams,explain the operation of enhancement type MOSFET.(16)
Or
(b)Mention the problem associated with a PN junction diode when operated at a very high frequencies.How is
it overcome in Schottky diode?Explain.(16)
15.(a)Describe the operation of UJT.What is the main use of this device?Why?(16)
Or
(b)Describe the various processes involved in the fabrication of monolithic Ics.(16)


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2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper for exam preparation. Question paper for 2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper, 2003 Anna University Chennai B E Electronics Tele Communication Engineering EC141 ELECTRONIC DEVICES Question paper